onsemi NSBC114YDXV6T1

Part No.:
NSBC114YDXV6T1
Manufacturer:
onsemi
Category:
Bipolar Transistor Arrays, Pre-Biased
Package:
SOT-563, SOT-666
Datasheet:
IC-MAX.COMNSBC114YDXV6T1.pdf
Description:
TRANS 2NPN PREBIAS 0.5W SOT563
Quantity:

Unit Price:$0

Ext Price:$0

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NSBC114YDXV6T1 Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
10kOhms
Resistor - Emitter Base (R2):
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
500mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563
Datasheet:
IC-MAX.COMNSBC114YDXV6T1.pdf
Image NSBC114YDXV6T1G NSBC114YDXV6T1
Part Number NSBC114YDXV6T1G NSBC114YDXV6T1
Manufacturer onsemi onsemi
Series - -
Package/Case SOT-563, SOT-666 SOT-563, SOT-666
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Obsolete
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) 10kOhms 10kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 500mW 500mW
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-563 SOT-563
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