Panjit International Inc. PJQ4602_R1_00001

Part No.:
PJQ4602_R1_00001
Manufacturer:
Panjit International Inc.
Category:
FET, MOSFET Arrays
Package:
8-PowerWDFN
Datasheet:
IC-MAX.COMPJQ4602_R1_00001.pdf
Description:
MOSFET N/P-CH 30V 6.4A 8DFN
Quantity:

Unit Price:$0

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PJQ4602_R1_00001 Information

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Manufacturer:
Panjit International Inc.
Series:
-
Package/Case:
8-PowerWDFN
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel Complementary
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs:
28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
343pF @ 15V, 870pF @ 15V
Power - Max:
2W (Ta), 17.8W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN3030B-8
Datasheet:
IC-MAX.COMPJQ4602_R1_00001.pdf
Image PJQ4602_R1_00001
Part Number PJQ4602_R1_00001
Manufacturer Panjit International Inc.
Series -
Package/Case 8-PowerWDFN
Packaging Tape & Reel (TR)
Product Status Not For New Designs
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 343pF @ 15V, 870pF @ 15V
Power - Max 2W (Ta), 17.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DFN3030B-8
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