Taiwan Semiconductor Corporation TQM250NB06CR RLG

Part No.:
TQM250NB06CR RLG
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
IC-MAX.COMTQM250NB06CR RLG.pdf
Description:
MOSFET N-CH 60V 7A/32A 8PDFNU
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Unit Price:$0

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TQM250NB06CR RLG Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
7A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Rds On (Max) @ Id, Vgs:
25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1396 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta), 68W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
8-PDFNU (5x6)
Datasheet:
IC-MAX.COMTQM250NB06CR RLG.pdf
Image TQM250NB06CR RLG
Part Number TQM250NB06CR RLG
Manufacturer Taiwan Semiconductor Corporation
Series -
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1396 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 8-PDFNU (5x6)
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