Taiwan Semiconductor Corporation TSM180P03CS RLG

Part No.:
TSM180P03CS RLG
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMTSM180P03CS RLG.pdf
Description:
MOSFET P-CHANNEL 30V 10A 8SOP
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Unit Price:$0

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TSM180P03CS RLG Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
18mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1730 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOP
Datasheet:
IC-MAX.COMTSM180P03CS RLG.pdf
Image TSM180P03CS RLG
Part Number TSM180P03CS RLG
Manufacturer Taiwan Semiconductor Corporation
Series -
Package/Case 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1730 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOP
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