Taiwan Semiconductor Corporation TSM190N08CZ C0G

Part No.:
TSM190N08CZ C0G
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC-MAX.COMTSM190N08CZ C0G.pdf
Description:
MOSFET N-CHANNEL 75V 190A TO220
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Unit Price:$0

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TSM190N08CZ C0G Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
190A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
160 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
8600 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
250W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220
Datasheet:
IC-MAX.COMTSM190N08CZ C0G.pdf
Image TSM190N08CZ C0G
Part Number TSM190N08CZ C0G
Manufacturer Taiwan Semiconductor Corporation
Series -
Package/Case TO-220-3
Packaging Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8600 pF @ 30 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
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