Taiwan Semiconductor Corporation TSM250N02DCQ RFG
- Part No.:
- TSM250N02DCQ RFG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- FET, MOSFET Arrays
- Package:
- 6-VDFN Exposed Pad
- Datasheet:
-
TSM250N02DCQ RFG.pdf
- Description:
- MOSFET 2N-CH 20V 5.8A 6TDFN
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
TSM250N02DCQ RFG Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- 6-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5.8A (Tc)
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 775pF @ 10V
- Power - Max:
- 620mW (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TDFN (2x2)
- Datasheet:
-
TSM250N02DCQ RFG.pdf
| Image |  |
| Part Number | TSM250N02DCQ RFG |
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Package/Case | 6-VDFN Exposed Pad |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 775pF @ 10V |
| Power - Max | 620mW (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TDFN (2x2) |
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