Taiwan Semiconductor Corporation TSM250NB06CV RGG

Part No.:
TSM250NB06CV RGG
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
8-PowerWDFN
Datasheet:
IC-MAX.COMTSM250NB06CV RGG.pdf
Description:
60V, 28A, SINGLE N-CHANNEL POWER
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Unit Price:$0

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TSM250NB06CV RGG Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
8-PowerWDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
6A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Rds On (Max) @ Id, Vgs:
25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1440 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
1.9W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PDFN (3.15x3.1)
Datasheet:
IC-MAX.COMTSM250NB06CV RGG.pdf
Image TSM250NB06CV RGG
Part Number TSM250NB06CV RGG
Manufacturer Taiwan Semiconductor Corporation
Series -
Package/Case 8-PowerWDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 30 V
FET Feature -
Power Dissipation (Max) 1.9W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (3.15x3.1)
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