Taiwan Semiconductor Corporation TSM2N7002KCX

Part No.:
TSM2N7002KCX
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Description:
60V, 0.3A, SINGLE N-CHANNEL POWE
Quantity:

Unit Price:$0

Ext Price:$0

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TSM2N7002KCX Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
30 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23
Image TSM2N7002KCX TSM2N7002KCX RFG
Part Number TSM2N7002KCX TSM2N7002KCX RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Series - -
Package/Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 300mA, 10V 2Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 0.4 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 25 V 30 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23 SOT-23
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