Taiwan Semiconductor Corporation TSM301K12CQ RFG

Part No.:
TSM301K12CQ RFG
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
6-VDFN Exposed Pad
Description:
MOSFET P-CH 20V 4.5A 6TDFN
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Unit Price:$0

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TSM301K12CQ RFG Information

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Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
6-VDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
94mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:
500mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
5.2 pF @ 6 V
FET Feature:
-
Power Dissipation (Max):
6.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TDFN (2x2)
Image TSM301K12CQ RFG
Part Number TSM301K12CQ RFG
Manufacturer Taiwan Semiconductor Corporation
Series -
Package/Case 6-VDFN Exposed Pad
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 94mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 500mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 5.2 pF @ 6 V
FET Feature -
Power Dissipation (Max) 6.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-TDFN (2x2)
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