Taiwan Semiconductor Corporation TSM480P06CI C0G

Part No.:
TSM480P06CI C0G
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack, Isolated Tab
Datasheet:
IC-MAX.COMTSM480P06CI C0G.pdf
Description:
MOSFET P-CH 60V 20A ITO220
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Unit Price:$0

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TSM480P06CI C0G Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
48mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
22.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1250 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
27W (Tc)
Operating Temperature:
-50°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ITO-220
Datasheet:
IC-MAX.COMTSM480P06CI C0G.pdf
Image TSM480P06CI C0G
Part Number TSM480P06CI C0G
Manufacturer Taiwan Semiconductor Corporation
Series -
Package/Case TO-220-3 Full Pack, Isolated Tab
Packaging Bulk
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 48mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 30 V
FET Feature -
Power Dissipation (Max) 27W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package ITO-220
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