Taiwan Semiconductor Corporation TSM60NC196CI

Part No.:
TSM60NC196CI
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack, Isolated Tab
Datasheet:
IC-MAX.COMTSM60NC196CI.pdf
Description:
600V, 20A, SINGLE N-CHANNEL POWE
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Unit Price:$0

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TSM60NC196CI Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
196mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1535 pF @ 300 V
FET Feature:
-
Power Dissipation (Max):
70W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ITO-220
Datasheet:
IC-MAX.COMTSM60NC196CI.pdf
Image TSM60NC196CI C0G TSM60NC196CI
Part Number TSM60NC196CI C0G TSM60NC196CI
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Series - -
Package/Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab
Packaging Tube Tube
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 196mOhm @ 9.5A, 10V 196mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 39 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1535 pF @ 300 V 1535 pF @ 300 V
FET Feature - -
Power Dissipation (Max) 70W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package ITO-220 ITO-220
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