Taiwan Semiconductor Corporation TSM6502CR RLG

Part No.:
TSM6502CR RLG
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
IC-MAX.COMTSM6502CR RLG.pdf
Description:
MOSFET N/P-CH 60V 24A 8PDFN
Quantity:

Unit Price:$0

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TSM6502CR RLG Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
24A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs:
34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10.3nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
1159pF @ 30V, 930pF @ 30V
Power - Max:
40W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PDFN (5x6)
Datasheet:
IC-MAX.COMTSM6502CR RLG.pdf
Image TSM6502CR RLG
Part Number TSM6502CR RLG
Manufacturer Taiwan Semiconductor Corporation
Series -
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 24A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.3nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1159pF @ 30V, 930pF @ 30V
Power - Max 40W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
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