Taiwan Semiconductor Corporation TSM650N15CR

Part No.:
TSM650N15CR
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Description:
150V, 24A, SINGLE N-CHANNEL POWE
Quantity:

Unit Price:$0

Ext Price:$0

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TSM650N15CR Information

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Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
4A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
65mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1829 pF @ 75 V
FET Feature:
-
Power Dissipation (Max):
2.6W (Ta), 96W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PDFN (5x6)
Image TSM650N15CR TSM650N15CR RLG
Part Number TSM650N15CR TSM650N15CR RLG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Series - -
Package/Case 8-PowerTDFN 8-PowerTDFN
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta), 24A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 4A, 10V 65mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1829 pF @ 75 V 1829 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 2.6W (Ta), 96W (Tc) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PDFN (5x6) 8-PDFN (5x6)
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