Taiwan Semiconductor Corporation TSM680P06DPQ56 RLG

Part No.:
TSM680P06DPQ56 RLG
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
IC-MAX.COMTSM680P06DPQ56 RLG.pdf
Description:
MOSFET 2P-CH 60V 12A 8PDFN
Quantity:

Unit Price:$0

Ext Price:$0

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TSM680P06DPQ56 RLG Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Rds On (Max) @ Id, Vgs:
68mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
16.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
870pF @ 30V
Power - Max:
3.5W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PDFN (5x6)
Datasheet:
IC-MAX.COMTSM680P06DPQ56 RLG.pdf
Image TSM680P06DPQ56 RLG
Part Number TSM680P06DPQ56 RLG
Manufacturer Taiwan Semiconductor Corporation
Series -
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Rds On (Max) @ Id, Vgs 68mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 30V
Power - Max 3.5W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
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