Taiwan Semiconductor Corporation TSM70N600CI

Part No.:
TSM70N600CI
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack, Isolated Tab
Description:
700V, 8A, SINGLE N-CHANNEL POWER
Quantity:

Unit Price:$0

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TSM70N600CI Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
700 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12.6 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
743 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
32W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ITO-220
Image TSM70N600CI C0G TSM70N600CI
Part Number TSM70N600CI C0G TSM70N600CI
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Series - -
Package/Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab
Packaging Tube Tube
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 700 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4A, 10V 600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.6 nC @ 10 V 12.6 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 743 pF @ 100 V 743 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package ITO-220AB ITO-220
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