Taiwan Semiconductor Corporation TSM80N1R2CL

Part No.:
TSM80N1R2CL
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Description:
800V, 5.5A, SINGLE N-CHANNEL POW
Quantity:

Unit Price:$0

Ext Price:$0

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TSM80N1R2CL Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19.4 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
685 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK
Image TSM80N1R2CL C0G TSM80N1R2CL
Part Number TSM80N1R2CL C0G TSM80N1R2CL
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Series - -
Package/Case TO-262-3 Short Leads, I2PAK TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging Tube Tube
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.8A, 10V 1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V 19.4 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 685 pF @ 100 V 685 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-262S (I2PAK) I2PAK
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