Toshiba Semiconductor and Storage MT3S113(TE85L,F)

Part No.:
MT3S113(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Bipolar RF Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
IC-MAX.COMMT3S113(TE85L,F).pdf
Description:
RF TRANS NPN 5.3V 12.5GHZ SMINI
Quantity:

Unit Price:$0

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MT3S113(TE85L,F) Information

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Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
5.3V
Frequency - Transition:
12.5GHz
Noise Figure (dB Typ @ f):
1.45dB @ 1GHz
Gain:
11.8dB
Power - Max:
800mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 30mA, 5V
Current - Collector (Ic) (Max):
100mA
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
S-Mini
Datasheet:
IC-MAX.COMMT3S113(TE85L,F).pdf
Image MT3S113TU,LF MT3S113(TE85L,F) MT3S113P(TE12L,F)
Part Number MT3S113TU,LF MT3S113(TE85L,F) MT3S113P(TE12L,F)
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Series - - -
Package/Case 3-SMD, Flat Leads TO-236-3, SC-59, SOT-23-3 TO-243AA
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Last Time Buy Active
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 5.3V 5.3V 5.3V
Frequency - Transition 11.2GHz 12.5GHz 7.7GHz
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz 1.45dB @ 1GHz 1.45dB @ 1GHz
Gain 12.5dB 11.8dB 10.5dB
Power - Max 900mW 800mW 1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V 200 @ 30mA, 5V 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA 100mA 100mA
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Grade - - -
Qualification - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package UFM S-Mini PW-MINI
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