Toshiba Semiconductor and Storage SSM6N42FE(TE85L,F)
- Part No.:
- SSM6N42FE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
SSM6N42FE(TE85L,F).pdf
- Description:
- MOSFET 2N-CH 20V 0.8A ES6
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
SSM6N42FE(TE85L,F) Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 800mA
- Rds On (Max) @ Id, Vgs:
- 240mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 90pF @ 10V
- Power - Max:
- 150mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ES6
- Datasheet:
-
SSM6N42FE(TE85L,F).pdf
| Image |  |
| Part Number | SSM6N42FE(TE85L,F) |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Package/Case | SOT-563, SOT-666 |
| Packaging | Tape & Reel (TR) |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 800mA |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 90pF @ 10V |
| Power - Max | 150mW |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | ES6 |
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