Vishay General Semiconductor - Diodes Division V12P22HM3_A/H

Part No.:
V12P22HM3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
TO-277, 3-PowerDFN
Description:
DIODE SCHOTTKY 200V 3.2A TO277A
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V12P22HM3_A/H Information

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Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
TMBS®
Package/Case:
TO-277, 3-PowerDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
3.2A
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 12 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
300 µA @ 200 V
Capacitance @ Vr, F:
720pF @ 4V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-277A (SMPC)
Operating Temperature - Junction:
-40°C ~ 175°C
Image V12P22HM3_A/I V12P22HM3_A/H
Part Number V12P22HM3_A/I V12P22HM3_A/H
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Series TMBS® TMBS®
Package/Case TO-277, 3-PowerDFN TO-277, 3-PowerDFN
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) 3.2A 3.2A
Voltage - Forward (Vf) (Max) @ If 900 mV @ 12 A 900 mV @ 12 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 300 µA @ 200 V 300 µA @ 200 V
Capacitance @ Vr, F 720pF @ 4V, 1MHz 720pF @ 4V, 1MHz
Grade Automotive Automotive
Qualification AEC-Q101 AEC-Q101
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-277A (SMPC) TO-277A (SMPC)
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C
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