Vishay Siliconix SI1563DH-T1-E3

Part No.:
SI1563DH-T1-E3
Manufacturer:
Vishay Siliconix
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Description:
MOSFET N/P-CH 20V SC70-6
Quantity:

Unit Price:$0

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SI1563DH-T1-E3 Information

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Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
1.13A, 880mA
Rds On (Max) @ Id, Vgs:
280mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
570mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70-6
Image SI1563DH-T1-E3 SI1563DH-T1-GE3
Part Number SI1563DH-T1-E3 SI1563DH-T1-GE3
Manufacturer Vishay Siliconix Vishay Siliconix
Series TrenchFET® TrenchFET®
Package/Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Obsolete Obsolete
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 1.13A, 880mA 1.13A, 880mA
Rds On (Max) @ Id, Vgs 280mOhm @ 1.13A, 4.5V 280mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id 1V @ 100µA 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds - -
Power - Max 570mW 570mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-70-6 SC-70-6
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