Vishay Siliconix SI4511DY-T1-GE3

Part No.:
SI4511DY-T1-GE3
Manufacturer:
Vishay Siliconix
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
MOSFET N/P-CH 20V 7.2A 8SOIC
Quantity:

Unit Price:$0

Ext Price:$0

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SI4511DY-T1-GE3 Information

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Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Cut Tape (CT)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
7.2A, 4.6A
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
1.1W
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Image SI4511DY-T1-E3 SI4511DY-T1-GE3
Part Number SI4511DY-T1-E3 SI4511DY-T1-GE3
Manufacturer Vishay Siliconix Vishay Siliconix
Series - -
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Cut Tape (CT) Cut Tape (CT)
Product Status Obsolete Obsolete
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 7.2A, 4.6A 7.2A, 4.6A
Rds On (Max) @ Id, Vgs 14.5mOhm @ 9.6A, 10V 14.5mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds - -
Power - Max 1.1W 1.1W
Operating Temperature - -
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
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