Vishay Siliconix SIA914ADJ-T1-GE3

Part No.:
SIA914ADJ-T1-GE3
Manufacturer:
Vishay Siliconix
Category:
FET, MOSFET Arrays
Package:
PowerPAK® SC-70-6 Dual
Datasheet:
IC-MAX.COMSIA914ADJ-T1-GE3.pdf
Description:
MOSFET 2N-CH 20V 4.5A PPAK8X8
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Unit Price:$0

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SIA914ADJ-T1-GE3 Information

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Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
PowerPAK® SC-70-6 Dual
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4.5A
Rds On (Max) @ Id, Vgs:
43mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:
470pF @ 10V
Power - Max:
7.8W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SC-70-6 Dual
Datasheet:
IC-MAX.COMSIA914ADJ-T1-GE3.pdf
Image SIA914ADJ-T1-GE3
Part Number SIA914ADJ-T1-GE3
Manufacturer Vishay Siliconix
Series TrenchFET®
Package/Case PowerPAK® SC-70-6 Dual
Packaging Tape & Reel (TR)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 43mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 10V
Power - Max 7.8W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Dual
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