WeEn Semiconductors WNSC2D06650TJ
- Part No.:
- WNSC2D06650TJ
- Manufacturer:
- WeEn Semiconductors
- Category:
- Single Diodes
- Package:
- 4-VSFN Exposed Pad
- Description:
- DIODE SIL CARBIDE 650V 6A 5DFN
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
WNSC2D06650TJ Information
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- Product attributes
- Attribute value
- Manufacturer:
- WeEn Semiconductors
- Series:
- -
- Package/Case:
- 4-VSFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 6A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 6 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 30 µA @ 650 V
- Capacitance @ Vr, F:
- 198pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-DFN (8x8)
- Operating Temperature - Junction:
- 175°C
| Image |  |
| Part Number | WNSC2D06650TJ |
| Manufacturer | WeEn Semiconductors |
| Series | - |
| Package/Case | 4-VSFN Exposed Pad |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 6A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Capacitance @ Vr, F | 198pF @ 1V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | 175°C |
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