YAGEO XSEMI XP3N5R0M

Part No.:
XP3N5R0M
Manufacturer:
YAGEO XSEMI
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMXP3N5R0M.pdf
Description:
MOSFET N-CH 30V 17.4A 8SO
Quantity:

Unit Price:$0

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XP3N5R0M Information

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Product attributes
Attribute value
Manufacturer:
YAGEO XSEMI
Series:
XP3N5R0
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
17.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V
Rds On (Max) @ Id, Vgs:
5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
33.6 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3040 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Datasheet:
IC-MAX.COMXP3N5R0M.pdf
Image XP3N5R0M XP3N5R0MT
Part Number XP3N5R0M XP3N5R0MT
Manufacturer YAGEO XSEMI YAGEO XSEMI
Series XP3N5R0 XP3N5R0
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-PowerLDFN
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 17.4A (Ta) 24.7A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 16A, 10V 5mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.6 nC @ 4.5 V 35.2 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3040 pF @ 15 V 3040 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 5W (Ta), 31.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-PMPAK (5x6)
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