YAGEO XSEMI XP3NA4R2YT

Part No.:
XP3NA4R2YT
Manufacturer:
YAGEO XSEMI
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
IC-MAX.COMXP3NA4R2YT.pdf
Description:
MOSFET N CH 30V 21.5A PMPAK3X3
Quantity:

Unit Price:$0

Ext Price:$0

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XP3NA4R2YT Information

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Product attributes
Attribute value
Manufacturer:
YAGEO XSEMI
Series:
XP3NA4R2
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
21.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
36.8 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3360 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
3.12W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PMPAK (3x3)
Datasheet:
IC-MAX.COMXP3NA4R2YT.pdf
Image XP3NA4R2YT
Part Number XP3NA4R2YT
Manufacturer YAGEO XSEMI
Series XP3NA4R2
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 21.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36.8 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3360 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.12W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PMPAK (3x3)
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Step1:Prepare product
Step1:Prepare product
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Step2:Vacuum packaging
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Step3:Anti-static bag
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Step4:Individual package
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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

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