制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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G26P04D5P40V,RD(MAX)<18M@-10V,RD(MAX)<22 Goford Semiconductor |
4,995 | - |
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TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Tc) | 4.5V, 10V | 18mOhm @ 12A, 10V | 2.5V @ 250µA | 45 nC @ 10 V | ±20V | 2479 pF @ 20 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G16P03SP30V,RD(MAX)<12M@-10V,RD(MAX)<18 Goford Semiconductor |
2,234 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Tc) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 35 nC @ 10 V | ±20V | 2800 pF @ 15 V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G16P03D3P30V,RD(MAX)<12M@-10V,RD(MAX)<18 Goford Semiconductor |
9,433 | - |
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TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Tc) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 35 nC @ 10 V | ±20V | 2805 pF @ 15 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G50N03D5N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M Goford Semiconductor |
4,998 | - |
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TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.4V @ 250µA | 38.4 nC @ 10 V | ±20V | 1661 pF @ 15 V | - | 25.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G48N03D3N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4 Goford Semiconductor |
4,925 | - |
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TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.4V @ 250µA | 38 nC @ 10 V | ±20V | 1692 pF @ 15 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G45P02D3P20V,RD(MAX)<[email protected],RD(MAX)< Goford Semiconductor |
4,866 | - |
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TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 45A (Tc) | 2.5V, 4.5V | 7.5mOhm @ 10A, 4.5V | 1V @ 250µA | 44 nC @ 4.5 V | ±12V | 4867 pF @ 10 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G30N02TMOSFET N-CH 20V 30A TO-220 Goford Semiconductor |
118 | - |
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TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 30A (Tc) | 4.5V | 13mOhm @ 20A, 4.5V | 1.2V @ 250µA | 15 nC @ 10 V | ±12V | 900 pF @ 10 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT060N04D5N40V,120A,RD<2.8M@10V,VTH1.0V~2. Goford Semiconductor |
4,870 | - |
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- | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 62A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | 2.3V @ 250µA | 44 nC @ 10 V | ±20V | 1276 pF @ 20 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT130N10KMOSFET N-CH 100V 60A 73.5W TO-2 Goford Semiconductor |
2,444 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 12mOhm @ 20A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 1215 pF @ 50 V | - | 73.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G080N06KMOSFET N-CH 60V 80A 110W TO-252 Goford Semiconductor |
2,384 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 8mOhm @ 20A, 10V | 4V @ 250µA | 77 nC @ 10 V | ±20V | 3408 pF @ 30 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |