制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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G12P04KP40V,RD(MAX)<35M@-10V,RD(MAX)<45 Goford Semiconductor |
1,147 | - |
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TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 12A (Tc) | 4.5V, 10V | 35mOhm @ 6A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1163 pF @ 20 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G200P04D3P-40V,-20A,RD(MAX)<75M@-10V,VTH- Goford Semiconductor |
5,000 | - |
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TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Tc) | 4.5V, 10V | 16mOhm @ -5A, -10V | 2.5V @ 250µA | 54 nC @ 10 V | ±20V | 2662 pF @ 20 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G075P02D5MOSFET P-CH 20V 45A DFN5*6-8L Goford Semiconductor |
5,000 | - |
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- | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | - | 45A (Tc) | 2.5V, 4.5V | 7.5mOhm @ 15A, 4.5V | 1V @ 250µA | 44 nC @ 10 V | ±12V | 4775 pF @ 10 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G400P06SMOSFET, P-CH, 60V,6A,SOP-8 Goford Semiconductor |
2,843 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6A (Tc) | 10V | 40mOhm @ 12A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±20V | 2506 pF @ 30 V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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GT095N04D5MOSFET N-CH 40V 54A DFN5*6-8L Goford Semiconductor |
4,440 | - |
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SGT | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 54A (Tc) | 4.5V, 10V | 6mOhm @ 10A, 10V | 2.5V @ 250µA | 23 nC @ 10 V | ±20V | 942 pF @ 20 V | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G10N10AN100V,RD(MAX)130MOHM@10V,TO-252 Goford Semiconductor |
4,272 | - |
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TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4.5V, 10V | 130mOhm @ 2A, 10V | 3V @ 250µA | 15.5 nC @ 10 V | ±20V | 690 pF @ 25 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G07P04SP40V,RD(MAX)<18M@-10V,RD(MAX)<22 Goford Semiconductor |
2,486 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 7A (Tc) | 4.5V, 10V | 18mOhm @ 7A, 10V | 2.5V @ 250µA | 31 nC @ 10 V | ±20V | 1750 pF @ 20 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G12P03D3P30V,RD(MAX)<20M@-10V,RD(MAX)<26 Goford Semiconductor |
7,449 | - |
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TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Tc) | 4.5V, 10V | 20mOhm @ 6A, 10V | 2V @ 250µA | 24.5 nC @ 10 V | ±20V | 1337 pF @ 15 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G12P10KEP-100V,ESD,-12A,RD(MAX)<200M@-10 Goford Semiconductor |
2,618 | - |
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TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 4.5V, 10V | 200mOhm @ 6A, 10V | 3V @ 250µA | 33 nC @ 10 V | ±20V | 1652 pF @ 50 V | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G25N06KN60V, 25A,RD<27M@10V,VTH1.0V~2.5 Goford Semiconductor |
4,980 | - |
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TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 10V | 27mOhm @ 20A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 970 pF @ 30 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |