制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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G3K8N15KEMOSFET N-CH ESD 150V 6A TO-252 Goford Semiconductor |
2,450 | - |
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TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 6A (Tc) | 4.5V, 10V | 370mOhm @ 2A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 549 pF @ 75 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G6P06P60V,RD(MAX)<96M@-10V,RD(MAX)<14 Goford Semiconductor |
11,970 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 3.5A (Tc) | 4.5V, 10V | 70mOhm @ 4A, 10V | 2.5V @ 250µA | 29 nC @ 10 V | ±20V | 1378 pF @ 30 V | - | 1.14W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G11SP-20V,RD(MAX)<[email protected],RD(MAX Goford Semiconductor |
1,660 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 11A (Tc) | 2.5V, 4.5V | 18.4mOhm @ 1A, 4.5V | 1.1V @ 250µA | 47 nC @ 10 V | ±12V | 2470 pF @ 10 V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G2014N20V,RD(MAX)<[email protected],RD(MAX)<11M Goford Semiconductor |
2,940 | - |
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TrenchFET® | 6-WDFN Exposed Pad | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 14A (Tc) | 2.5V, 10V | 7mOhm @ 5A, 10V | 900mV @ 250µA | 17.5 nC @ 4.5 V | ±12V | 1710 pF @ 10 V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) |
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GT6K2P10KHMOSFET P-CH 100V 4.3A TO-252 Goford Semiconductor |
2,310 | - |
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SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 670mOhm @ 1A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±20V | 247 pF @ 50 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G35N02KN20V,RD(MAX)<[email protected],RD(MAX)<18 Goford Semiconductor |
1,769 | - |
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TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 2.5V, 4.5V | 9mOhm @ 20A, 4.5V | 1.2V @ 250µA | 24 nC @ 4.5 V | ±12V | 1380 pF @ 10 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G28N03D3N30V,RD(MAX)<12M@10V,RD(MAX)<18M Goford Semiconductor |
5,000 | - |
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TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Tc) | 4.5V, 10V | 12mOhm @ 16A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 896 pF @ 15 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G170P03D3P-30V, -20A,RD<18M@-10V,VTH-1V~- Goford Semiconductor |
5,000 | - |
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TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 15mOhm @ 5A, 10V | 2.5V @ 250µA | 35 nC @ 10 V | ±20V | 1805 pF @ 15 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G450P04KMOSFET, P-CH,-40V,-11A,RD(MAX)<4 Goford Semiconductor |
2,400 | - |
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TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 11A (Tc) | 4.5V, 10V | 40mOhm @ 6A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 983 pF @ 20 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G06N10N100V,RD(MAX)<240M@10V,VTH1.2V~3 Goford Semiconductor |
4,602 | - |
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TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Tc) | 4.5V, 10V | 240mOhm @ 6A, 10V | 3V @ 250µA | 6.2 nC @ 10 V | ±20V | 190 pF @ 50 V | - | 25W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |