制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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G700P06HP-60V,-5A,RD(MAX)<75M@-10V,VTH-1 Goford Semiconductor |
4,784 | - |
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TrenchFET® | TO-261-4, TO-261AA | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Tc) | 4.5V, 10V | 75mOhm @ 6A, 10V | 2.5V @ 250µA | 15.8 nC @ 10 V | ±20V | 1459 pF @ 30 V | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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G7K2N20HEN200V, ESD,2A,RD<0.7@10V,VTH1V~2 Goford Semiconductor |
2,501 | - |
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TrenchFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2A (Tc) | 4.5V, 10V | 700mOhm @ 1A, 10V | 2.5V @ 250µA | 10.8 nC @ 10 V | ±20V | 568 pF @ 100 V | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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G3K8N15HEMOSFET N-CH ESD 150V 2A SOT-223 Goford Semiconductor |
2,490 | - |
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TrenchFET® | TO-261-4, TO-261AA | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 2A (Tc) | 4.5V, 10V | 370mOhm @ 2A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 558 pF @ 75 V | - | 2.16W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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G090P02SMOSFET P-CH 20V 11A SOP-8 Goford Semiconductor |
4,000 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 11A (Tc) | 2.5V, 4.5V | 9mOhm @ 1A, 4.5V | 1.1V @ 250µA | 47 nC @ 10 V | ±12V | 2225 pF @ 10 V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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GT100N04D3N40V, 13A,RD<10M@10V,VTH1.0V~2.5 Goford Semiconductor |
6,800 | - |
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SGT | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 13A (Tc) | 4.5V, 10V | 10mOhm @ 5A, 10V | 2.5V @ 250µA | 32 nC @ 10 V | ±20V | 642 pF @ 20 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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GT095N04D3MOSFET N-CH 40V 47A DFN3*3-8L Goford Semiconductor |
4,049 | - |
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SGT | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 47A (Tc) | 4.5V, 10V | 6mOhm @ 3A, 10V | 2.5V @ 250µA | 23 nC @ 10 V | ±20V | 947 pF @ 20 V | - | 22.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G33N03SN30V,RD(MAX)<12M@10V,RD(MAX)<13M Goford Semiconductor |
3,930 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Tc) | 4.5V, 10V | 12mOhm @ 8A, 10V | 1.1V @ 250µA | 13 nC @ 15 V | ±20V | 1550 pF @ 15 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G10N03SN30V,RD(MAX)<12M@10V,RD(MAX)<16M Goford Semiconductor |
3,500 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Tc) | 4.5V, 10V | 9mOhm @ 6A, 10V | 2.5V @ 250µA | 17 nC @ 4.5 V | ±20V | 832 pF @ 15 V | - | 2.23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G7P03SP30V,RD(MAX)<22M@-10V,RD(MAX)<33 Goford Semiconductor |
3,454 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Tc) | 4.5V, 10V | 22mOhm @ 3A, 10V | 2V @ 250µA | 24.5 nC @ 10 V | ±20V | 1253 pF @ 15 V | - | 2.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G2012N20V,RD(MAX)<[email protected],RD(MAX)<18 Goford Semiconductor |
2,944 | - |
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TrenchFET® | 6-WDFN Exposed Pad | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Tc) | 2.5V, 4.5V | 12mOhm @ 5A, 4.5V | 1V @ 250µA | 29 nC @ 10 V | ±10V | 1255 pF @ 10 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) |