Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
MSC010SDA170BDIODE SIL CARB 1.7KV 31A TO247-3 Microchip Technology |
47 |
|
![]() |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 31A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1700 V | 820pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
![]() |
1N5802USDIODE GEN PURP 50V 1A D-5A Microchip Technology |
50 |
|
![]() |
- | SQ-MELF, A | Bulk | Active | Standard | 50 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
MSC050SDA070SDIODE SIL CARBIDE 700V 88A D3PAK Microchip Technology |
16 |
|
![]() |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 88A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | 2034pF @ 1V, 1MHz | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
![]() |
JANTX1N5420USDIODE GEN PURP 600V 3A D-5B Microchip Technology |
49 |
|
![]() |
- | SQ-MELF, E | Bulk | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | Military | MIL-PRF-19500/411 | Surface Mount | D-5B | -65°C ~ 175°C |
![]() |
MSC050SDA120BDIODE SIC 1.2KV 109A TO247-2 Microchip Technology |
73 |
|
![]() |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 109A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 246pF @ 400V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
MSC050SDA120SDIODE SIL CARB 1.2KV 50A D3PAK Microchip Technology |
85 |
|
![]() |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 50A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Surface Mount | D3PAK | - |
|
UES1106DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
100 |
|
![]() |
- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | - | - | - | Through Hole | A, Axial | -55°C ~ 150°C |
![]() |
1N5711UB/TRSMALL-SIGNAL SCHOTTKY Microchip Technology |
74 |
|
![]() |
- | 3-SMD, No Lead | Tape & Reel (TR) | Active | Schottky | 50 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | UB | -65°C ~ 150°C |
![]() |
UES1303DIODE GEN PURP 150V 6A AXIAL Microchip Technology |
100 |
|
![]() |
- | B, Axial | Bulk | Active | Standard | 150 V | 6A | 925 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | - | - | - | Through Hole | B, Axial | 175°C (Max) |
|
APT15DQ100KGDIODE GEN PURP 1KV 15A TO220 Microchip Technology |
593 |
|
![]() |
- | TO-220-2 | Tube | Active | Standard | 1000 V | 15A | 3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 235 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-220 [K] | -55°C ~ 175°C |