Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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APT15DQ120KGDIODE GP 1.2KV 15A TO220 Microchip Technology |
718 |
|
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- | TO-220-2 | Tube | Active | Standard | 1200 V | 15A | 3.3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 240 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
APT15D60KGDIODE GP 600V 15A TO220 Microchip Technology |
88 |
|
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- | TO-220-2 | Tube | Active | Standard | 600 V | 15A | 1.8 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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MSC010SDA070KDIODE SIL CARB 700V 10A TO220-2 Microchip Technology |
55 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-220-2 | - |
|
JANTX1N6638DIODE GEN PURP 125V 300MA D5B Microchip Technology |
80 |
|
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- | D, Axial | Bulk | Active | Standard | 125 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 125 V | - | Military | MIL-PRF-19500/578 | Through Hole | D-5D | -65°C ~ 175°C |
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JANTX1N5418DIODE GEN PURP 400V 3A AXIAL Microchip Technology |
75 |
|
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- | B, Axial | Bulk | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTX1N5550DIODE GEN PURP 200V 5A AXIAL Microchip Technology |
83 |
|
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- | B, Axial | Bulk | Active | Standard | 200 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTX1N5553DIODE GEN PURP 800V 5A AXIAL Microchip Technology |
91 |
|
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- | B, Axial | Bulk | Active | Standard | 800 V | 5A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
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APT100D60B2GDIODE GEN PURP 600V 100A TO247 Microchip Technology |
46 |
|
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- | TO-247-2 | Tube | Active | Standard | 600 V | 100A | - | - | - | - | - | - | - | Through Hole | TO-247 | - |
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MSC020SDA120BDIODE SIL CARB 1.2KV 49A TO247 Microchip Technology |
37 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 49A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1130pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
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MSC050SDA070BDIODE SIL CARBIDE 700V 50A TO247 Microchip Technology |
59 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 50A | 1.5 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247 | - |