Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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1N6621USDIODE GEN PURP 440V 1.2A A-MELF Microchip Technology |
38 |
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- | SQ-MELF, A | Bulk | Active | Standard | 440 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
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MSC030SDA120BCTDIODE SIL CARB 1.2KV 65A TO247-3 Microchip Technology |
24 |
|
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- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 65A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 141pF @ 400V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
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UES1306DIODE GEN PURP 400V 3A AXIAL Microchip Technology |
45 |
|
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- | B, Axial | Bulk | Active | Standard | 400 V | 3A | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 400 V | - | - | - | Through Hole | B, Axial | -55°C ~ 150°C |
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MSC030SDA170BDIODE SIL CARB 1.7KV 82A TO247 Microchip Technology |
44 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 82A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1700 V | 2070pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
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APTDF500U40GDIODE GEN PURP 400V 500A LP4 Microchip Technology |
10 |
|
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- | LP4 | Bulk | Active | Standard | 400 V | 500A | 1.5 V @ 500 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 2.5 mA @ 400 V | - | - | - | Chassis Mount | LP4 | - |
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APT30D30BGDIODE GP 300V 30A TO247 Microchip Technology |
44 |
|
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- | TO-247-2 | Tube | Active | Standard | 300 V | 30A | 1.4 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 250 µA @ 300 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
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1N5818-1DIODE SCHOTTKY 30V 1A DO41 Microchip Technology |
91 |
|
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- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 30 V | 1A | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | - | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 150°C |
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1N5616USDIODE GEN PURP 400V 1A D-5A Microchip Technology |
92 |
|
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- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | - | - | Surface Mount | D-5A | -65°C ~ 200°C |
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1N5553USDIODE GEN PURP 800V 3A B SQ-MELF Microchip Technology |
40 |
|
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- | SQ-MELF, B | Bulk | Active | Standard | 800 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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MSC030SDA120SDIODE SIL CARB 1.2KV 30A D3PAK Microchip Technology |
84 |
|
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- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Surface Mount | D3PAK | - |