Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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JANTX1N5622DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
4,981 |
|
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- | A, Axial | Bulk | Active | Standard | 1000 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1000 V | - | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
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1N5619USDIODE GEN PURP 600V 1A D-5A Microchip Technology |
4,921 |
|
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- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | 25pF @ 12V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
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1N5811DIODE GEN PURP 150V 3A B AXIAL Microchip Technology |
9 |
|
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- | B, Axial | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N5806USDIODE GEN PURP 150V 1A D-5A Microchip Technology |
7,663 |
|
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- | SQ-MELF, A | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
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1N5811US/TRDIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology |
2 |
|
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- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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MSC030SDA070SDIODE SIL CARBIDE 700V 60A D3PAK Microchip Technology |
24 |
|
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- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 60A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | - | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
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JANTX1N5420DIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
5,551 |
|
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- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTXV1N5806USDIODE GEN PURP 150V 1A D-5A Microchip Technology |
18 |
|
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- | SQ-MELF, A | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
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1N5825DIODE SCHOTTKY 40V 5A TOP HAT Microchip Technology |
8,012 |
|
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- | Axial | Bulk | Active | Schottky | 40 V | 5A | 380 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 mA @ 40 V | - | - | - | Through Hole | TOP HAT | - |
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JANTX1N5616DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
5,526 |
|
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- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |