Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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JANTX1N5619DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
8,229 |
|
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- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | - | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
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1N5554USDIODE GEN PURP 1KV 3A B SQ-MELF Microchip Technology |
8 |
|
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- | SQ-MELF, B | Bulk | Active | Standard | 1000 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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UES1302DIODE GEN PURP 100V 6A AXIAL Microchip Technology |
9,703 |
|
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- | Axial | Bulk | Active | Standard | 100 V | 6A | 925 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | - | - | - | Through Hole | Axial | -55°C ~ 175°C |
|
1N5622DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
8,521 |
|
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- | A, Axial | Bulk | Active | Standard | 1000 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1000 V | - | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
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1N6622USDIODE GEN PURP 660V 1.2A A-MELF Microchip Technology |
5,542 |
|
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- | SQ-MELF, A | Bulk | Active | Standard | 660 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
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JANHCA1N5819DIODE SCHOTTKY 45V 1A DO41 Microchip Technology |
2,541 |
|
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- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | - | Military | MIL-PRF-19500/586 | Through Hole | DO-41 | -55°C ~ 110°C |
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JAN1N4247DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
14 |
|
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- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANTX1N5617USDIODE GEN PURP 400V 1A D-5A Microchip Technology |
2,292 |
|
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- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 µA @ 400 V | 35pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
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JANTX1N5615USDIODE GEN PURP 200V 1A A SQ-MELF Microchip Technology |
7,427 |
|
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- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | Military | MIL-PRF-19500/429 | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |
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JAN1N6623USDIODE GEN PURP 880V 1A D-5A Microchip Technology |
2,256 |
|
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- | SQ-MELF, A | Bulk | Active | Standard | 880 V | 1A | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 880 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |