Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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1N5416DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
4,931 |
|
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- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N5811DIODE GEN PURP 150V 3A AXIAL Microchip Technology |
22 |
|
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- | B, Axial | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | - | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
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1N6640USDIODE GEN PURP 75V 300MA D-5D Microchip Technology |
2,544 |
|
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- | SQ-MELF, D | Bulk | Active | Standard | 75 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | - | - | Surface Mount | D-5D | -65°C ~ 175°C |
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1N6677UR-1DIODE SCHOTTKY 40V 200MA DO213AA Microchip Technology |
7,120 |
|
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- | DO-213AA | Bulk | Active | Schottky | 40 V | 200mA | 500 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 40 V | 50pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 125°C |
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JAN1N4245DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
5,269 |
|
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- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 200 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
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1N5617DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
4,490 |
|
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- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N5617DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
7,740 |
|
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- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N4942DIODE GEN PURP 200V 1A A AXIAL Microchip Technology |
6,776 |
|
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- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Military | MIL-PRF-19500/359 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANTX1N3612DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
2 |
|
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- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 400 V | - | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANTX1N5552DIODE GEN PURP 600V 5A AXIAL Microchip Technology |
8,662 |
|
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- | B, Axial | Bulk | Active | Standard | 600 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |