Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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NXPSC10650X6QDIODE SIL CARB 650V 10A TO220F WeEn Semiconductors |
2,995 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C (Max) |
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NXPSC10650B6JDIODE SIL CARBIDE 650V 10A D2PAK WeEn Semiconductors |
2,290 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
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NXPSC126506QDIODE SIL CARB 650V 12A TO220AC WeEn Semiconductors |
990 |
|
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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WNSC6D20650B6JDIODE SIL CARBIDE 650V 20A D2PAK WeEn Semiconductors |
4,518 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C |
|
NXPSC10650QDIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors |
1,916 |
|
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- | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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WNSC2D151200WQDIODE SIL CARB 1.2KV 15A TO247-2 WeEn Semiconductors |
4,589 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 700pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
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NXPSC166506QDIODE SIL CARB 650V 16A TO220AC WeEn Semiconductors |
3,003 |
|
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 534pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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NXPSC10650D6JDIODE SIL CARBIDE 650V 10A DPAK WeEn Semiconductors |
7,204 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
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NXPSC206506QDIODE SIL CARB 650V 20A TO220AC WeEn Semiconductors |
3,041 |
|
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 500 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
WNSC2D30650WQSILICON CARBIDE SCHOTTKY DI WeEn Semiconductors |
275 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 980pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |