Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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WNSC6D01650MBJDIODE SIL CARBIDE 650V 1A SMB WeEn Semiconductors |
1,944 |
|
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- | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1A | 1.4 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | SMB | 175°C |
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WNSC2D06650DJDIODE SIL CARBIDE 650V 6A DPAK WeEn Semiconductors |
11,997 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 198pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C |
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WNSC2D08650QDIODE SIL CARB 650V 8A TO220AC WeEn Semiconductors |
4,990 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
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BYC30WT-600PQDIODE GEN PURP 600V 30A TO247-3 WeEn Semiconductors |
1,585 |
|
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- | TO-247-3 | Tube | Active | Standard | 600 V | 30A | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 22 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-3 | 175°C (Max) |
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BYC30-600P,127DIODE GEN PURP 600V 30A TO220AC WeEn Semiconductors |
7,896 |
|
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- | TO-220-2 | Tube | Active | Standard | 600 V | 30A | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220AC | 175°C (Max) |
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NXPSC046506QDIODE SIL CARB 650V 4A TO220AC WeEn Semiconductors |
20,200 |
|
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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NXPSC04650X6QDIODE SIL CARBIDE 650V 4A TO220F WeEn Semiconductors |
2,826 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C (Max) |
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NXPSC04650B6JDIODE SIL CARBIDE 650V 4A D2PAK WeEn Semiconductors |
3,090 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
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BYV60W-600PQDIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors |
4,084 |
|
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- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
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WNSC2D08650DJDIODE SIL CARBIDE 650V 8A DPAK WeEn Semiconductors |
7,463 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C |