Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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BYT79-600,127DIODE GEN PURP 600V 15A TO220AC WeEn Semiconductors |
3,965 |
|
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- | TO-220-2 | Tube | Active | Standard | 600 V | 15A | 1.38 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 50 µA @ 600 V | - | - | - | Through Hole | TO-220AC | 150°C (Max) |
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BYC20X-600,127DIODE GEN PURP 500V 20A TO220FP WeEn Semiconductors |
3,733 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 500 V | 20A | 2.9 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 200 µA @ 600 V | - | - | - | Through Hole | TO-220FP | 150°C (Max) |
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WNSC2D04650DJDIODE SIL CARBIDE 650V 4A DPAK WeEn Semiconductors |
4,987 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 125pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C |
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WNSC2D04650XQDIODE SIL CARBIDE 650V 4A TO220F WeEn Semiconductors |
2,756 |
|
- |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 125pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C |
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WNSC2D04650TJDIODE SIL CARBIDE 650V 4A 5DFN WeEn Semiconductors |
10,523 |
|
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- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 125pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
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WND35P12BJDIODE GEN PURP 1.2KV 35A D2PAK WeEn Semiconductors |
1,799 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1200 V | 35A | 1.4 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1200 V | - | - | - | Surface Mount | D2PAK | -40°C ~ 150°C |
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WNSC2D06650TJDIODE SIL CARBIDE 650V 6A 5DFN WeEn Semiconductors |
2,024 |
|
- |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 198pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
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BYV30JT-600PQDIODE GEN PURP 600V 30A TO3P WeEn Semiconductors |
3,840 |
|
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- | TO-3P-3, SC-65-3 | Tube | Active | Standard | 600 V | 30A | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-3P | 175°C (Max) |
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BYC30X-600P,127DIODE GEN PURP 600V 30A TO220FP WeEn Semiconductors |
9,203 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 30A | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220FP | 175°C (Max) |
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WNSC2D03650MBJDIODE SIL CARBIDE 650V 3A SMB WeEn Semiconductors |
5,409 |
|
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- | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 3A | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | SMB | 175°C |