Infineon Technologies IRF9910

Part No.:
IRF9910
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMIRF9910.pdf
Description:
MOSFET 2N-CH 20V 10A/12A 8SO
Quantity:
Payment:
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Shipping:
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IRF9910 Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
10A, 12A
Rds On (Max) @ Id, Vgs:
13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
900pF @ 10V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Datasheet:
IC-MAX.COMIRF9910.pdf

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